Suitable for laser scribing of transparent conductive films (SnO2, AZO, ITO), amorphous silicon film systems (a-Si, μc-Si), back electrode films (ZnO, AI), and other thin-film solar cell materials, including calcium titanium thin films, metal molybdenum (Mo) thin films, metal nickel (Ni) thin films, and cadmium telluride (CdTe) thin films.
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Technical Parameters
SE-P(1-5)
Effective Processing Area: 1400mm x 1000mm (customizable according to requirements)
Maximum Operating Speed: 2000mm/s (P1/P2/P3/P5), 200mm/s (P4)
±10μm/1000mm
±10μm/1000mm
30~60μm
5~20mm
300~500μm
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